IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PD40F40

PD40F40

PD40F40 Silicon Controlled Rectifier, 40000mA I(T), 400V V(RRM); PD40F40
CM1400DUC-24NF

CM1400DUC-24NF

CM1400DUC-24NF Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-9; CM1400DUC-24NF
BLF8G22LS-220J

BLF8G22LS-220J

BLF8G22LS-220J RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF8G22LS-220J
BC847BV-TP

BC847BV-TP

BC847BV-TP Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, LEAD FREE, ULTRA SMALL, PLASTIC PACKAGE-6; BC847BV-TP
BAP51-02-TP

BAP51-02-TP

BAP51-02-TP Pin Diode, 60V V(BR), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2; BAP51-02-TP
2MBI50N-120

2MBI50N-120

2MBI50N-120 IGBT Module In-stock / Fuji Electric: 1200V 50A. High-speed, reliable power switching. 90-day warranty, Inverters. Global fast shipping. Get quote.
DSS2X41-01A

DSS2X41-01A

DSS2X41-01A Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 100V V(RRM), Silicon, MINIBLOC-4; DSS2X41-01A
93MT140K

93MT140K

93MT140K Silicon Controlled Rectifier, 1400 V, SCR; 93MT140K
IRKT500-16

IRKT500-16

IRKT500-16 Silicon Controlled Rectifier, 785A I(T)RMS, 500000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, SUPER MAGN-A-PAK-6; IRKT500-16
HTZ270H48K

HTZ270H48K

HTZ270H48K Rectifier Diode, 1 Phase, 2 Element, 3.4A, 48000V V(RRM), Silicon, ZH, 3 PIN; HTZ270H48K