IGBT

VSKJ320-16

VSKJ320-16 Rectifier Diode, 1 Phase, 2 Element, 320A, 1600V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-3; VSKJ320-16

Vishay Semiconductor Diodes Division Qty: 1264pcs

ESAL01-02C

ESAL01-02C Rectifier Diode, 1 Phase, 2 Element, 150A, 200V V(RRM), Silicon, MODULE-2; ESAL01-02C

FUJI Qty: 175pcs

SK55DGL126

SK55DGL126 Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, CASE T 14, SEMITOP 3, 11 PIN; SK55DGL126

SEMIKRON Qty: -44pcs

RM100HA-12F

RM100HA-12F Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon,; RM100HA-12F

MITSUBISHI Qty: 284pcs

VI-JNV-EZ

VI-JNV-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JNV-EZ

VICOR Qty: 280pcs

SK040RTP

SK040RTP Littelfuse Silicon Controlled Rectifier, 40A 25000mA 1000V, 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Littelfuse Qty: 2041pcs

PDH3012

PDH3012 Silicon Controlled Rectifier, 47A I(T)RMS, 30000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-6; PDH3012

NIEC Qty: 117pcs

IRF3709ZPBF

IRF3709ZPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3; IRF3709ZPBF

International Rectifier Qty: 1263pcs

5SNA1800E170100

5SNA1800E170100 Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel, MODULE-9; 5SNA1800E170100

ABB Qty: 111pcs

FDC15-48S140

FDC15-48S140 Analog Circuit,; FDC15-48S140

P-DUKE Qty: 203pcs