IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3123

VI-2NK-CV

VI-2NK-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-2NK-CV

VICOR Qty: 43pcs

BSM100GB120DLCK

BSM100GB120DLCK Infineon Technical information IGBT Modules 1200V 100A DUAL ;

Infineon Qty: 600pcs Price: US$27

S8X8ES1RP

S8X8ES1RP Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-92, TO-92, 3 PIN; S8X8ES1RP

Littelfuse Inc Qty: 1226pcs

VI-2ND-IU

VI-2ND-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-2ND-IU

VICOR Qty: 326pcs

SLD-2083CZ

SLD-2083CZ RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, 2 PIN; SLD-2083CZ

RFMD Qty: 725pcs

MCC44-16io8B

MCC44-16io8B Silicon Controlled Rectifier, 80A I(T)RMS, 49000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC44-16io8B

IXYS Qty: 3pcs

CM150DY-12E

CM150DY-12E IGBT Module In-stock / Mitsubishi: 600V 150A. Low loss trench gate. 90-day warranty, industrial motor drives. Global shipping. Request pricing now.

Mitsubishi Qty: 772pcs Price: US$38

PTMB100A6C

PTMB100A6C Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel; PTMB100A6C

NIEC Qty: 251pcs

PE250GB80

PE250GB80 Silicon Controlled Rectifier, 250000mA I(T), 800V V(RRM); PE250GB80

SanRex Qty: 177pcs

VI-JNP-CY

VI-JNP-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JNP-CY

VICOR Qty: 172pcs