IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3127

SLD-2083CZ

SLD-2083CZ RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, 2 PIN; SLD-2083CZ

RFMD Qty: 725pcs

MCC44-16io8B

MCC44-16io8B Silicon Controlled Rectifier, 80A I(T)RMS, 49000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC44-16io8B

IXYS Qty: 3pcs

CM150DY-12E

CM150DY-12E IGBT Module In-stock / Mitsubishi: 600V 150A. Low loss trench gate. 90-day warranty, industrial motor drives. Global shipping. Request pricing now.

Mitsubishi Qty: 772pcs Price: US$45

PTMB100A6C

PTMB100A6C Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel; PTMB100A6C

NIEC Qty: 251pcs

PE250GB80

PE250GB80 Silicon Controlled Rectifier, 250000mA I(T), 800V V(RRM); PE250GB80

SanRex Qty: 177pcs

VI-JNP-CY

VI-JNP-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JNP-CY

VICOR Qty: 172pcs

Q4006RH3

Q4006RH3 TRIAC, 600V V(DRM), 6A I(T)RMS, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; Q4006RH3

Littelfuse Inc Qty: 1111pcs

CM600HA-12H

CM600HA-12His a 600V (VCES), 600 AmpereSingle IGBTMOD™ Power Module

Mitsubishi Qty: 47pcs Price: US$60

MCC44-08io8B

MCC44-08io8B Silicon Controlled Rectifier, 80A I(T)RMS, 49000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC44-08io8B

IXYS Qty: 27pcs

IRKT26-08

IRKT26-08 Silicon Controlled Rectifier, 39.25 A, 800 V, SCR, TO-240AA; IRKT26-08

IR Qty: 173pcs