IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3131

MG300M1UK1

MG300M1UK1 IGBT Module In-stock / Toshiba: 1000V 300A 2.5V Vce(sat). 90-day warranty, commercial inverter systems. Global fast shipping. Get quote.

Toshiba Qty: 164pcs Price: US$35

DH2X60-18A

DH2X60-18A Rectifier Diode, 1 Phase, 2 Element, 1800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4; DH2X60-18A

IXYS Qty: 515pcs

IXGN200N60B3

IXGN200N60B3 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN200N60B3

IXYS Qty: 1792pcs

VI-J0R-IZ

VI-J0R-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J0R-IZ

VICOR Qty: 157pcs

91MT100KB

91MT100KB Silicon Controlled Rectifier, 1000 V, SCR; 91MT100KB

IR Qty: 131pcs

VI-B7L-CW

VI-B7L-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, PACKAGE-9; VI-B7L-CW

VICOR Qty: 254pcs

VRF152

VRF152 RF Power Field-Effect Transistor; VRF152

Microsemi Qty: 1145pcs

VI-J74-CX

VI-J74-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J74-CX

VICOR Qty: 91pcs

MIO1500-25E10

MIO1500-25E10 Insulated Gate Bipolar Transistor, 1500A I(C), 2500V V(BR)CES, N-Channel, MODULE-9; MIO1500-25E10

IXYS Qty: 238pcs

IXTP5N50P

IXTP5N50P Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3; IXTP5N50P

IXYS Qty: 1501pcs