IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

TD106N16

TD106N16

TD106N16 Silicon Controlled Rectifier, 180A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,; TD106N16
2MBI100U4A-120

2MBI100U4A-120

2MBI100U4A-120 IGBT Module In-stock / Fuji Electric: 1200V 100A for motor drives. 90-day warranty. Global fast shipping. Request pricing now.
SKM200GAL101D

SKM200GAL101D

SKM200GAL101D Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel; SKM200GAL101D
VI-B7P-IU

VI-B7P-IU

VI-B7P-IU DC-DC Booster Module; VI-B7P-IU
W0735SA12

W0735SA12

W0735SA12 Rectifier Diode, 1 Phase, 1 Element, 735A, 1200V V(RRM), Silicon,; W0735SA12
MDF150A30L

MDF150A30L

MDF150A30L Rectifier Diode,; MDF150A30L
VI-23B-IY

VI-23B-IY

VI-23B-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-23B-IY
MPS650ZL1G

MPS650ZL1G

MPS650ZL1G NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; MPS650ZL1G
UM2022

UM2022

UM2022 Analog Circuit, Hybrid, PDIP12; UM2022
DIM1200NSM12-E

DIM1200NSM12-E

DIM1200NSM12-E Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, N, 7 PIN; DIM1200NSM12-E