IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3137

SKM195GAL124DN

SKM195GAL124DN IGBT Module In-stock / SEMIKRON: 1200V, 195A (260A Max) half-bridge configuration. Features low VCE(sat) and robust CAL diodes for industrial drives & solar inverters. 90-day warranty. Contact our sales team.

Semikron Qty: 266pcs Price: US$47

PD471607

PD471607 Silicon Controlled Rectifier, 1775A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, POW-R-BLOK-5; PD471607

PRX Qty: 295pcs

S4004VS2

S4004VS2 Silicon Controlled Rectifier, 4A I(T)RMS, 2500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-251, TO-251, 3 PIN; S4004VS2

Littelfuse Inc Qty: 1198pcs

S8006DRP

S8006DRP Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3; S8006DRP

Littelfuse Inc Qty: 6470pcs

SGS100ZE-A

SGS100ZE-A DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; SGS100ZE-A

POWER-ONE Qty: 173pcs

NSVBAV70TT3G

NSVBAV70TT3G 100 V Dual Common Cathode Switching Diode, SC-75 (SOT-416) 3 LEAD, 10000-REEL; NSVBAV70TT3G

ON Semiconductor Qty: 1282pcs

IXTN200N10T

IXTN200N10T Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXTN200N10T

IXYS Qty: 150pcs

APTGT50A60T1G

APTGT50A60T1G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT50A60T1G

Microsemi Power Products Group Qty: 1647pcs

6MBI20L-060

6MBI20L-060 IGBT Module In-stock / Fuji Electric: 600V 20A. High-efficiency 6-pack for motor drives. 90-day warranty. Global shipping. Request pricing now.

Fuji Qty: -161pcs Price: US$29

S6006RS2

S6006RS2 Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; S6006RS2

Littelfuse Inc Qty: 2147pcs