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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

6DI50AH-050

6DI50AH-050

6DI50AH-050 Fuji Electric power transistor module for commercial string inverter DC links. Rated 600 V, 50 A. Global dispatch options from Shunlongwei.
VI-131

VI-131

VI-131 Analog Circuit; VI-131
PD200HB120

PD200HB120

PD200HB120 Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM); PD200HB120
FW282-TL-E

FW282-TL-E

FW282-TL-E TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,35V V(BR)DSS,6A I(D),SO; FW282-TL-E
DDTA123TCA-7

DDTA123TCA-7

DDTA123TCA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; DDTA123TCA-7
1DI75E-100

1DI75E-100

1DI75E-100 Power Bipolar Transistor, 75A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, M206, 7 PIN; 1DI75E-100
EVF33T-040

EVF33T-040

EVF33T-040 Power Bipolar Transistor, 15A I(C), 1-Element,; EVF33T-040
SKT290F04DS

SKT290F04DS

SKT290F04DS Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB; SKT290F04DS
KBU3510-G

KBU3510-G

KBU3510-G Bridge Rectifier Diode, 35A, 1000V V(RRM),; KBU3510-G
MMIX1G120N120A3V1

MMIX1G120N120A3V1

MMIX1G120N120A3V1 Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,; MMIX1G120N120A3V1