IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3135

IXFN26N120P

IXFN26N120P Power Field-Effect Transistor, 23A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN26N120P

IXYS Qty: 299pcs

IXFK32N100Q3

IXFK32N100Q3 Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN; IXFK32N100Q3

IXYS Qty: 613pcs

VI-J3M-EY

VI-J3M-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J3M-EY

VICOR Qty: 353pcs

TD106N16

TD106N16 Silicon Controlled Rectifier, 180A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,; TD106N16

EUPEC Qty: 73pcs

2MBI100U4A-120

2MBI100U4A-120 IGBT Module In-stock / Fuji Electric: 1200V 100A for motor drives. 90-day warranty. Global fast shipping. Request pricing now.

Fuji Electric Qty: 247pcs Price: US$43

SKM200GAL101D

SKM200GAL101D Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel; SKM200GAL101D

SEMIKRON Qty: 205pcs

VI-B7P-IU

VI-B7P-IU DC-DC Booster Module; VI-B7P-IU

VICOR Qty: -16pcs

W0735SA12

W0735SA12 Rectifier Diode, 1 Phase, 1 Element, 735A, 1200V V(RRM), Silicon,; W0735SA12

WESTCODE Qty: 170pcs

MDF150A30L

MDF150A30L Rectifier Diode,; MDF150A30L

SanRex Qty: 242pcs

VI-23B-IY

VI-23B-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-23B-IY

VICOR Qty: 131pcs