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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

W1294NC600

W1294NC600

W1294NC600 Rectifier Diode,; W1294NC600
CS241020

CS241020

CS241020 Rectifier Diode, 1 Phase, 1 Element, 200A, 1000V V(RRM), Silicon,; CS241020
VS-88CNQ060APBF

VS-88CNQ060APBF

VS-88CNQ060APBF Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, LEAD FREE, PLASTIC, CASE D-61-8, 3 PIN; VS-88CNQ060APBF
CR2L-260

CR2L-260

CR2L-260 Electric Fuse, Super Fast Blow, 260A, 250VAC, 100000A (IR), Inline/holder,; CR2L-260
VI-J24-EZ

VI-J24-EZ

VI-J24-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J24-EZ
2SD2670TL

2SD2670TL

2SD2670TL Small Signal Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN; 2SD2670TL
VI-J5X-EX

VI-J5X-EX

VI-J5X-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J5X-EX
MCMA65P1600TA

MCMA65P1600TA

MCMA65P1600TA Silicon Controlled Rectifier, 65000mA I(T), 1600V V(RRM),; MCMA65P1600TA
IXXX100N60C3H1

IXXX100N60C3H1

IXXX100N60C3H1 Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel,; IXXX100N60C3H1
IXTH26N60P

IXTH26N60P

IXTH26N60P Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN; IXTH26N60P