IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3173

NSVBAV70TT3G

NSVBAV70TT3G 100 V Dual Common Cathode Switching Diode, SC-75 (SOT-416) 3 LEAD, 10000-REEL; NSVBAV70TT3G

ON Semiconductor Qty: 1282pcs

IXTN200N10T

IXTN200N10T Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXTN200N10T

IXYS Qty: 150pcs

APTGT50A60T1G

APTGT50A60T1G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT50A60T1G

Microsemi Power Products Group Qty: 1647pcs

6MBI20L-060

6MBI20L-060 IGBT Module In-stock / Fuji Electric: 600V 20A 6-pack. 90-day warranty, CNC & robotics servo drives. Global fast shipping. Get quote.

Fuji Electric Qty: 321pcs Price: US$35

S6006RS2

S6006RS2 Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; S6006RS2

Littelfuse Inc Qty: 2147pcs

APTDF400AA20G

APTDF400AA20G Rectifier Diode, 1 Phase, 2 Element, 500A, 200V V(RRM), Silicon, ROHS COMPLIANT, SP6, 3 PIN; APTDF400AA20G

Microsemi Power Products Group Qty: 714pcs

CPT400100

CPT400100 Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 100V V(RRM), Silicon, PACKAGE-2; CPT400100

Microsemi Power Products Group Qty: 1135pcs

VI-B6L-EW

VI-B6L-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B6L-EW

VICOR Qty: 138pcs

FDD18N20LZ

FDD18N20LZ Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 16 A, 125 mΩ, DPAK, 2500-REEL; FDD18N20LZ

Fairchild Semiconductor Qty: 2539pcs

VSKE270-16

VSKE270-16 Rectifier Diode, 1 Phase, 1 Element, 270A, 1600V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-2; VSKE270-16

Vishay Semiconductor Diodes Division Qty: 1328pcs