IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APT30M19JVFR

APT30M19JVFR

APT30M19JVFR Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4; APT30M19JVFR
2SA1706S-AN

2SA1706S-AN

2SA1706S-AN Bipolar Transistor, -50V, -2A, Low VCE(sat), PNP Single NMP, NMP (Taping), 2500-REEL; 2SA1706S-AN
92MT120KB

92MT120KB

92MT120KB Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 3 Element; 92MT120KB
FDMC86520L

FDMC86520L

FDMC86520L N-Channel Power Trench® MOSFET 60V, 22A, 7.9mΩ, 3000-REEL; FDMC86520L
STA460C

STA460C

STA460C Power Bipolar Transistor, 6A I(C), 70V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, STA, SIP-10; STA460C
2N5950

2N5950

2N5950 RF Small Signal Field-Effect Transistor; 2N5950
VI-21D-IX

VI-21D-IX

VI-21D-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-21D-IX
IRG7PH44K10D-EPBF

IRG7PH44K10D-EPBF

IRG7PH44K10D-EPBF Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel; IRG7PH44K10D-EPBF
FF400R12KF4

FF400R12KF4

FF400R12KF4 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-10; FF400R12KF4
TPDV1240RG

TPDV1240RG

TPDV1240RG 40A high-voltage Triacs; TPDV1240RG