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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

HSMS-281C-TR2G

HSMS-281C-TR2G

HSMS-281C-TR2G Mixer Diode, Silicon, ROHS COMPLIANT, MINIATURE, SC-70, 3 PIN; HSMS-281C-TR2G
KR224503

KR224503

KR224503 Power Bipolar Transistor, 30A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin, D18, 5 PIN; KR224503
2MBI50L-120

2MBI50L-120

2MBI50L-120 Fuji Electric IGBT Module for inverter welders and induction heating supplies. Rated 200V, 50A. Global dispatch.
GD50PiL120C6S

GD50PiL120C6S

GD50PiL120C6S IGBT Module In-stock / StarPower: 1200V 50A with low switching loss. 90-day warranty, industrial motor drives. Global fast shipping. Request pricing now.
VI-BN4-CV

VI-BN4-CV

VI-BN4-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BN4-CV
GA200HS60S

GA200HS60S

GA200HS60S Insulated Gate Bipolar Transistor, 470A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-11; GA200HS60S
MMO110-08IO7

MMO110-08IO7

MMO110-08IO7 Silicon Controlled Rectifier, 81A I(T)RMS, 51000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-4; MMO110-08IO7
2SC3906KT146R

2SC3906KT146R

2SC3906KT146R Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN; 2SC3906KT146R
QK016NH6TP

QK016NH6TP

QK016NH6TP Alternistor TRIAC, 1000V V(DRM), 16A I(T)RMS, TO-263AB, TO-263, D2PAK-3; QK016NH6TP
V48C5M100AL

V48C5M100AL

V48C5M100AL DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V48C5M100AL