IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

AON7423

AON7423

AON7423 Transistor; AON7423
BUF460AV

BUF460AV

BUF460AV 90A, 450V, NPN, Si, POWER TRANSISTOR, ISOTOP-3; BUF460AV
PAH75S48-28

PAH75S48-28

PAH75S48-28 DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; PAH75S48-28
IXTN30N100L

IXTN30N100L

IXTN30N100L Power Field-Effect Transistor, 30A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXTN30N100L
HSMS-281C-TR2G

HSMS-281C-TR2G

HSMS-281C-TR2G Mixer Diode, Silicon, ROHS COMPLIANT, MINIATURE, SC-70, 3 PIN; HSMS-281C-TR2G
KR224503

KR224503

KR224503 Power Bipolar Transistor, 30A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin, D18, 5 PIN; KR224503
2MBI50L-120

2MBI50L-120

2MBI50L-120 IGBT Module In-stock / Fuji Electric: 1200V 50A. Low Vce(sat) for efficient industrial drives. 90-day warranty. Global fast shipping. Get quote now.
GD50PiL120C6S

GD50PiL120C6S

GD50PiL120C6S IGBT Module In-stock / StarPower: 1200V 50A with low switching loss. 90-day warranty, industrial motor drives. Global fast shipping. Request pricing now.
VI-BN4-CV

VI-BN4-CV

VI-BN4-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BN4-CV
GA200HS60S

GA200HS60S

GA200HS60S Insulated Gate Bipolar Transistor, 470A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-11; GA200HS60S