IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ZTX601STOB

ZTX601STOB

ZTX601STOB Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; ZTX601STOB
CDSH3-4448C-G

CDSH3-4448C-G

CDSH3-4448C-G Rectifier Diode, 0.25A, 80V V(RRM),; CDSH3-4448C-G
SG2823J

SG2823J

SG2823J Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, DIP-18; SG2823J
VI-BNJ-EW

VI-BNJ-EW

VI-BNJ-EW DC-DC Booster Module, 100W; VI-BNJ-EW
SKM195GB126DN

SKM195GB126DN

SKM195GB126DN IGBT Module In-stock / SEMIKRON: 1200V 195A. High power density for industrial control. 90-day warranty. Fast global shipping. Get quote.
LX807DTRP

LX807DTRP

LX807DTRP 4 Quadrant Logic Level TRIAC, 400V V(DRM), 0.8A I(T)RMS, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4; LX807DTRP
AO6409A

AO6409A

AO6409A Transistor; AO6409A
2N7002VA

2N7002VA

2N7002VA N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω, 3000-REEL; 2N7002VA
2SA854STPQ

2SA854STPQ

2SA854STPQ Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SPT, SC-72, 3 PIN; 2SA854STPQ
PE110F120

PE110F120

PE110F120 Silicon Controlled Rectifier, 110000mA I(T), 1200V V(RRM); PE110F120