IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2FI200F-060D

2FI200F-060D

2FI200F-060D Rectifier Diode, 200A, 600V V(RRM),; 2FI200F-060D
APTGF200SK120D3G

APTGF200SK120D3G

APTGF200SK120D3G Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN
PD7M440H

PD7M440H

PD7M440H Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7; PD7M440H
VI-JWF-IY

VI-JWF-IY

VI-JWF-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JWF-IY
VI-B2W-EV

VI-B2W-EV

VI-B2W-EV DC-DC Booster Module; VI-B2W-EV
ARF461BG

ARF461BG

ARF461BG RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN; ARF461BG
DB3X316N0L

DB3X316N0L

DB3X316N0L Mixer Diode, Very High Frequency, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DB3X316N0L
T9G0021203DH

T9G0021203DH

T9G0021203DH Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T9G, 3 PIN; T9G0021203DH
SKM75GDL123D

SKM75GDL123D

SKM75GDL123D IGBT Array & Module Transistor N Channel 75 A 1.2 kV 1.2 kV Module;
VJ247M

VJ247M

VJ247M Bridge Rectifier Diode, Avalanche, 1 Phase, 10A, Silicon, PACKAGE-4; VJ247M