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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DTB543EMT2L

DTB543EMT2L

DTB543EMT2L Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN; DTB543EMT2L
NJVMJB42CT4G

NJVMJB42CT4G

NJVMJB42CT4G 6.0 A, 100 V PNP Bipolar Power Transistor, D2PAK 2 LEAD, 800-REEL; NJVMJB42CT4G
VI-22M-EV

VI-22M-EV

VI-22M-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-22M-EV
CD430640

CD430640

CD430640 Silicon Controlled Rectifier, 40000mA I(T), 600V V(RRM); CD430640
VI-JNW-IZ

VI-JNW-IZ

VI-JNW-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JNW-IZ
IRG7PH28UD1MPBF

IRG7PH28UD1MPBF

IRG7PH28UD1MPBF Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel; IRG7PH28UD1MPBF
2N5883G

2N5883G

2N5883G 25 A, 60 V PNP Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; 2N5883G
2SA1708S-AN

2SA1708S-AN

2SA1708S-AN Bipolar Transistor, -100V, -1A, Low VCE(sat), (PNP)NPN Single NMP, NMP (Taping), 2500-REEL; 2SA1708S-AN
NVD5117PLT4G

NVD5117PLT4G

NVD5117PLT4G Single P-Channel Power MOSFET -60V, -61A, 16mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NVD5117PLT4G
CD610816C

CD610816C

CD610816C Rectifier Diode, 1 Phase, 2 Element, 160A, 800V V(RRM), Silicon, MODULE-3; CD610816C