IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T72H123574DN

T72H123574DN

T72H123574DN Silicon Controlled Rectifier, 550A I(T)RMS, 550000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T72, 3 PIN; T72H123574DN
DD25F-60

DD25F-60

DD25F-60 Rectifier Diode, 25A, 600V V(RRM),; DD25F-60
S4040NRP

S4040NRP

S4040NRP Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3; S4040NRP
APTGT75A1202G

APTGT75A1202G

APTGT75A1202G Insulated Gate Bipolar Transistor,; APTGT75A1202G
2SD2707T2LV

2SD2707T2LV

2SD2707T2LV Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, 3 PIN; 2SD2707T2LV
STD12NM50ND

STD12NM50ND

STD12NM50ND N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package; STD12NM50ND
VI-B4W-IU

VI-B4W-IU

VI-B4W-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B4W-IU
MRF372R3

MRF372R3

MRF372R3 RF Power Field-Effect Transistor; MRF372R3
DIM600NSM45-F

DIM600NSM45-F

DIM600NSM45-F Insulated Gate Bipolar Transistor, 600A I(C), 4500V V(BR)CES, N-Channel, LEAD FREE, MODULE-7; DIM600NSM45-F
VCD105-12IO7

VCD105-12IO7

VCD105-12IO7 Silicon Controlled Rectifier, 180A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, ECOPAC-10; VCD105-12IO7