IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXGB200N60B3

IXGB200N60B3

IXGB200N60B3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS264, 3 PIN; IXGB200N60B3
SDB107-TP

SDB107-TP

SDB107-TP Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SDB-1, 4 PIN; SDB107-TP
SG2700EX22

SG2700EX22

SG2700EX22 Silicon Controlled Rectifier, 800 A, 2500 V, GATE TURN-OFF SCR; SG2700EX22
TM15T3A-M

TM15T3A-M

TM15T3A-M Silicon Controlled Rectifier, 23.55A I(T)RMS, 400V V(DRM), 400V V(RRM), 3 Element,; TM15T3A-M
SEMIX452GAL126HDS

SEMIX452GAL126HDS

SEMIX452GAL126HDS Insulated Gate Bipolar Transistor, 470A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN; SEMIX452GAL126HDS
ZXTS1000E6TA

ZXTS1000E6TA

ZXTS1000E6TA Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon,; ZXTS1000E6TA
VI-21B-CW

VI-21B-CW

VI-21B-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-21B-CW
L6X8E5

L6X8E5

L6X8E5 4 Quadrant Logic Level TRIAC, 600V V(DRM), 0.8A I(T)RMS, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; L6X8E5
CD420840

CD420840

CD420840 Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, POW-R-BLOK-5; CD420840
MURT10005R

MURT10005R

MURT10005R 50V 100A Silicon Super Fast Recovery Rectifier in Three Tower Package; MURT10005R