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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PH300S280-28

PH300S280-28

PH300S280-28 DC-DC Regulated Power Supply Module, 1 Output, 300W,; PH300S280-28
R7202009

R7202009

R7202009 Powerex Rectifier Diode, 1 Phase, 1 Element, 900A, 2000V, Silicon
MCC95-14io8B

MCC95-14io8B

MCC95-14io8B Silicon Controlled Rectifier, 180A I(T)RMS, 116000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, TO-240AA, TO-240AA, 7 PIN; MCC95-14io8B
DRA2124T0L

DRA2124T0L

DRA2124T0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DRA2124T0L
VKA75LS24-1

VKA75LS24-1

VKA75LS24-1 DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VKA75LS24-1
2N5684

2N5684

2N5684 50A, 80V, PNP, Si, POWER TRANSISTOR, TO-204AE, CASE 197A-05, 2 PIN; 2N5684
MITA10WB1200TMH

MITA10WB1200TMH

MITA10WB1200TMH Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, MODULE-23; MITA10WB1200TMH
AUIRGDC0250

AUIRGDC0250

AUIRGDC0250 Insulated Gate Bipolar Transistor, 141A I(C), 1200V V(BR)CES, N-Channel,; AUIRGDC0250
MDI300-12A4

MDI300-12A4

MDI300-12A4 Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MDI300-12A4
2FI100G-100N

2FI100G-100N

2FI100G-100N Rectifier Diode, 1 Phase, 2 Element, 100A, 1000V V(RRM), Silicon, R201, 3 PIN; 2FI100G-100N