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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J31-IZ

VI-J31-IZ

VI-J31-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J31-IZ
PDMB600A6

PDMB600A6

PDMB600A6 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,; PDMB600A6
SKM111RZR

SKM111RZR

SKM111RZR Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
T9G0081203DH

T9G0081203DH

T9G0081203DH Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, T9G, 3 PIN; T9G0081203DH
BAT54CWT-TP

BAT54CWT-TP

BAT54CWT-TP Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; BAT54CWT-TP
VI-B41-CW

VI-B41-CW

VI-B41-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9
IRGS10B60KDTRLP

IRGS10B60KDTRLP

IRGS10B60KDTRLP Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRGS10B60KDTRLP
IXGA12N120A3

IXGA12N120A3

IXGA12N120A3 Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN; IXGA12N120A3
CM450DX-24T

CM450DX-24T

CM450DX-24T IGBT Module In-stock / Mitsubishi Electric: 1200V 450A. Dual half-bridge for high-power switching. 90-day warranty, motor control, UPS. Global fast shipping. Get quote.
2A75HB12C1U

2A75HB12C1U

Genuine 2A75HB12C1U Infineon replacement unit for forklift traction inverters. Meets 1200V and 75A ratings. Fast worldwide courier delivery.