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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRG4PH20KDPBF

IRG4PH20KDPBF

IRG4PH20KDPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRG4PH20KDPBF
VI-J1F-CX

VI-J1F-CX

VI-J1F-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J1F-CX
VI-BTV-IW

VI-BTV-IW

VI-BTV-IW DC-DC Booster Module, 100W; VI-BTV-IW
PRHMB400B12

PRHMB400B12

PRHMB400B12 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PRHMB400B12
VI-27Z-CY

VI-27Z-CY

VI-27Z-CY DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-27Z-CY
BD746C-S

BD746C-S

BD746C-S Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3; BD746C-S
7MBR10SA140

7MBR10SA140

Fuji Electric 7MBR10SA140 PIM replacement for CNC and robot servo drives. Rated 1400V and 10A. Fast global dispatch from Shunlongwei.
VI-BNF-EV

VI-BNF-EV

VI-BNF-EV DC-DC Booster Module, 150W; VI-BNF-EV
PT10012

PT10012

PT10012 General Purpose Inductor, 100uH, 15%, 1 Element, RADIAL LEADED, ROHS COMPLIANT; PT10012
NJVMJD50T4G

NJVMJD50T4G

NJVMJD50T4G 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NJVMJD50T4G