IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-JWY-IW

VI-JWY-IW

VI-JWY-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-JWY-IW
CM531213

CM531213

CM531213 Silicon Controlled Rectifier, 205A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, POW-R-BLOK-8; CM531213
DMG904010R

DMG904010R

DMG904010R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN; DMG904010R
Q6008VH4

Q6008VH4

Q6008VH4 Alternistor TRIAC, 600V V(DRM), 8A I(T)RMS, TO-251, VPAK-3; Q6008VH4
FDMC86102LZ

FDMC86102LZ

FDMC86102LZ N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ, 3000-REEL; FDMC86102LZ
DDTA114WE-7-F

DDTA114WE-7-F

DDTA114WE-7-F Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3; DDTA114WE-7-F
CDBD2060-HF

CDBD2060-HF

CDBD2060-HF Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-2; CDBD2060-HF
IKD15N60R

IKD15N60R

IKD15N60R Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3; IKD15N60R
FDD8447L_F085

FDD8447L_F085

FDD8447L_F085 40V, 50A, 7.0mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL; FDD8447L_F085
MWI60-06G6K

MWI60-06G6K

MWI60-06G6K Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, MODULE-24; MWI60-06G6K