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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BTV-IW

VI-BTV-IW

VI-BTV-IW DC-DC Booster Module, 100W; VI-BTV-IW
PRHMB400B12

PRHMB400B12

PRHMB400B12 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PRHMB400B12
VI-27Z-CY

VI-27Z-CY

VI-27Z-CY DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-27Z-CY
BD746C-S

BD746C-S

BD746C-S Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3; BD746C-S
7MBR10SA140

7MBR10SA140

Evaluate the Fuji Electric 7MBR10SA140 PIM, rated 1400.0 V and 10.0 A, for robotic drive repairs, thermal mounting, and replacement compatibility.
VI-BNF-EV

VI-BNF-EV

VI-BNF-EV DC-DC Booster Module, 150W; VI-BNF-EV
PT10012

PT10012

PT10012 General Purpose Inductor, 100uH, 15%, 1 Element, RADIAL LEADED, ROHS COMPLIANT; PT10012
NJVMJD50T4G

NJVMJD50T4G

NJVMJD50T4G 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NJVMJD50T4G
DRC2123E0L

DRC2123E0L

DRC2123E0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DRC2123E0L
MCO150-16IO1

MCO150-16IO1

MCO150-16IO1 Silicon Controlled Rectifier, 234A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MINIBLOC-4; MCO150-16IO1