IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IGB20N60H3

IGB20N60H3

IGB20N60H3 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN; IGB20N60H3
2N4401RLRMG

2N4401RLRMG

2N4401RLRMG 600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226AA, 3 PIN; 2N4401RLRMG
SI6969DQ-T1-E3

SI6969DQ-T1-E3

SI6969DQ-T1-E3 Power Field-Effect Transistor, 4.6A I(D), 12V, 0.034ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8; SI6969DQ-T1-E3
MIXA30W1200TML

MIXA30W1200TML

MIXA30W1200TML Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MIXA30W1200TML
BTB26-600BRG

BTB26-600BRG

BTB26-600BRG 25A standard Triacs; BTB26-600BRG
GBPC2502W-G

GBPC2502W-G

GBPC2502W-G Bridge Rectifier Diode, 25A, 200V V(RRM),; GBPC2502W-G
FJN3303FTA

FJN3303FTA

FJN3303FTA High Voltage Fast Switching NPN Power Transistor, 2000-FNFLD; FJN3303FTA
PTMB75B12

PTMB75B12

PTMB75B12 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19; PTMB75B12
EMF32T2R

EMF32T2R

EMF32T2R Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT6, 6 PIN; EMF32T2R
VI-JW0-IY

VI-JW0-IY

VI-JW0-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JW0-IY