IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VS-SD1500C30L

VS-SD1500C30L

VS-SD1500C30L Rectifier Diode,; VS-SD1500C30L
VI-JNK-IY

VI-JNK-IY

VI-JNK-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JNK-IY
VI-25F-EY

VI-25F-EY

VI-25F-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-25F-EY
VI-26D-EW

VI-26D-EW

VI-26D-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-26D-EW
VI-25N-IV

VI-25N-IV

VI-25N-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-25N-IV
T600021804BT

T600021804BT

T600021804BT Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-93, HERMETIC SEALED, T60, 3 PIN; T600021804BT
T9G0221003DH

T9G0221003DH

T9G0221003DH Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, T9G, 3 PIN; T9G0221003DH
IRG4BC20UD-S

IRG4BC20UD-S

IRG4BC20UD-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3; IRG4BC20UD-S
MCC224-24IO1

MCC224-24IO1

MCC224-24IO1 Silicon Controlled Rectifier, 400A I(T)RMS, 240000mA I(T), 2400V V(DRM), 2400V V(RRM), 2 Element, MODULE-7; MCC224-24IO1
S6004DS1TP

S6004DS1TP

S6004DS1TP Silicon Controlled Rectifier, 4A I(T)RMS, 2500mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-252AA, DPAK-3; S6004DS1TP