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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-233-CW

VI-233-CW

VI-233-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-233-CW
VI-233-CV

VI-233-CV

VI-233-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-233-CV
IXGX320N60A3

IXGX320N60A3

IXGX320N60A3 Insulated Gate Bipolar Transistor, 320A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXGX320N60A3
VHFD29-14IO1

VHFD29-14IO1

VHFD29-14IO1 Silicon Controlled Rectifier, 25A I(T)RMS, 28000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, V1-PACK-7; VHFD29-14IO1
VI-J6F-IW

VI-J6F-IW

VI-J6F-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J6F-IW
PDH10012

PDH10012

PDH10012 Silicon Controlled Rectifier, 156A I(T)RMS, 100000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,; PDH10012
VI-2TN-IW

VI-2TN-IW

VI-2TN-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2TN-IW
KS621280HB

KS621280HB

KS621280HB Power Bipolar Transistor, 800A I(C), 1-Element,; KS621280HB
PH50S48-3.3

PH50S48-3.3

PH50S48-3.3 Power Supply Module,; PH50S48-3.3
IXA20I1200PB

IXA20I1200PB

IXA20I1200PB Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; IXA20I1200PB