Scan Part Number

Align the crosshair center with the part number.

Tap the flash button if the warehouse is dark.

Recognizing Part Number...

IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BNJ-EV

VI-BNJ-EV

VI-BNJ-EV DC-DC Booster Module, 150W; VI-BNJ-EV
PC80QL03N

PC80QL03N

PC80QL03N Rectifier Diode, Schottky, 1 Phase, 2 Element, 80A, 30V V(RRM), Silicon, MODULE-2; PC80QL03N
VI-20N-EX

VI-20N-EX

VI-20N-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid, MODULE-9; VI-20N-EX
DTA123JCA-TP

DTA123JCA-TP

DTA123JCA-TP Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; DTA123JCA-TP
BSC014N04LS

BSC014N04LS

BSC014N04LS Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SUPERSO8, TDSON-8FL, 8 PIN; BSC014N04LS
KR421K15

KR421K15

KR421K15 Power Bipolar Transistor, 150A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 9 Pin, D23, 9 PIN; KR421K15
TIP100-BP

TIP100-BP

TIP100-BP Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN; TIP100-BP
IXTH02N250

IXTH02N250

IXTH02N250 Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3; IXTH02N250
W0428SE28

W0428SE28

W0428SE28 DIODE 428 A, 2800 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W0428SE28
TT36N16

TT36N16

TT36N16 Silicon Controlled Rectifier, 80A I(T)RMS, 36000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-7; TT36N16