MWI450-17E9 Insulated Gate Bipolar Transistor, 540A I(C), 1700V V(BR)CES, N-Channel, MODULE-29; MWI450-17E9
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.