GA200HS60S1 Insulated Gate Bipolar Transistor, 480A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-7; GA200HS60S1
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.