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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BTY-CV

VI-BTY-CV

VI-BTY-CV DC-DC Booster Module, 1 Output, 99W, Hybrid, PACKAGE-9; VI-BTY-CV
T707083374BY

T707083374BY

T707083374BY Silicon Controlled Rectifier, 500A I(T)RMS, 500000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, CASE T70, 3 PIN; T707083374BY
TN2540-600G-TR

TN2540-600G-TR

TN2540-600G-TR Standard 25 A SCRs; TN2540-600G-TR
DDB6U84N12R

DDB6U84N12R

DDB6U84N12R Bridge Rectifier Diode, 104A, 1200V V(RRM),; DDB6U84N12R
TXN625RG

TXN625RG

TXN625RG 25A standard SCRs; TXN625RG
2N5302G

2N5302G

2N5302G High Power NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; 2N5302G
VI-26F-CW

VI-26F-CW

VI-26F-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-26F-CW
SI3529DV-T1-E3

SI3529DV-T1-E3

SI3529DV-T1-E3 TRANSISTOR 2.25 A, 40 V, 0.125 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Power; SI3529DV-T1-E3
SMV1130-079LF

SMV1130-079LF

SMV1130-079LF Variable Capacitance Diode, 19.3pF C(T), 26V, Silicon, Hyperabrupt, GREEN, SC-79, 2 PIN; SMV1130-079LF
IXFH15N100Q3

IXFH15N100Q3

IXFH15N100Q3 Power Field-Effect Transistor, 15A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3; IXFH15N100Q3