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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGF330A60D3G

APTGF330A60D3G

APTGF330A60D3G Insulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7; APTGF330A60D3G
PT7610

PT7610

PT7610 ADC, Flash Method, 6-Bit, 1 Func, 1 Channel, Parallel, Word Access, Bipolar, CQFP44, HERMETIC SEALED, CERQUAD-44; PT7610
BLF8G20LS-400PVQ

BLF8G20LS-400PVQ

BLF8G20LS-400PVQ BLF8G20LS-400PV; BLF8G20LS-400PVQ
MCD310-12io1

MCD310-12io1

MCD310-12io1 Silicon Controlled Rectifier, 500A I(T)RMS, 320000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5; MCD310-12io1
RM100CZ-24

RM100CZ-24

RM100CZ-24 Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon,; RM100CZ-24
MCD224-20IO1

MCD224-20IO1

MCD224-20IO1 Silicon Controlled Rectifier, 400A I(T)RMS, 240000mA I(T), 2000V V(DRM), 2000V V(RRM), 2 Element, MODULE-7; MCD224-20IO1
TD36N12

TD36N12

TD36N12 Silicon Controlled Rectifier, 80A I(T)RMS, 36000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5; TD36N12
IXFN72N55Q2

IXFN72N55Q2

IXFN72N55Q2 Power Field-Effect Transistor, 72A I(D), 550V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN72N55Q2
VI-26R-IV

VI-26R-IV

VI-26R-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, PACKAGE-9; VI-26R-IV
MG100H2YL1

MG100H2YL1

MG100H2YL1 IGBT Module In-stock / Toshiba: 1200V 100A dual device for efficient power switching. 90-day warranty, for motor drives & VFDs. Global fast shipping. Get quote.