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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRG7PH42U-EP

IRG7PH42U-EP

IRG7PH42U-EP Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel,; IRG7PH42U-EP
VI-274-IV

VI-274-IV

VI-274-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-274-IV
APTGF100A120T3WG

APTGF100A120T3WG

APTGF100A120T3WG Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGF100A120T3WG
IRFP250MPBF

IRFP250MPBF

IRFP250MPBF Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRFP250MPBF
SF163

SF163

SF163 Rectifier Diode, 1 Phase, 2 Element, 16A, 150V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3; SF163
BDW63A-S

BDW63A-S

BDW63A-S Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BDW63A-S
T106F41

T106F41

T106F41 Silicon Controlled Rectifier, 4A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-202AB, TO-202AB, 3 PIN; T106F41
2N5961

2N5961

2N5961 Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN; 2N5961
2SC5706-E

2SC5706-E

2SC5706-E Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 500-BLKBG; 2SC5706-E
SK70DH08

SK70DH08

SK70DH08 Silicon Controlled Rectifier, 68000mA I(T), 800V V(DRM), 800V V(RRM), 3 Element, CASE T40, SEMITOP-28; SK70DH08