IXSK35N120BD1 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN; IXSK35N120BD1
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.