Mitsubishi QM50TB-2HB IGBT Module

IGBT POWER TRANSISTOR MODULE 50A/1000V/GTR/6U QM50TB-2HB • IC Collector current .......................... 50A • VCEX Collector-emitter voltage ......... 1000V • hFE DC current gain............................. 750 Collector-base voltage 1000 V Emitter-base voltage 7V Collector current 50A Collector reverse current 50A Collector dissipation 500A Base current 3A Surge collector reverse current 500A Junction temperature –40~+150°C Storage temperature –40~+125°C Isolation voltage 2500V Weight 660g IGBT POWER TRANSISTOR MODULE 50A/1000V/GTR/6U