Semikron SKD75GAL123D IGBT Module

Features:
• Round main terminals (2 mm∅)
• Easy drilling of PCB
• Input diodes glass passivated
• 1400 V PIV, good for 500 VAC
• High I2 t rating (inrush current)
• IGBT is latch-up free, homogeneous NPT silicon-structure
• High short circuit capability, self limiting to 6 * Icnom
• Fast & soft CAL diodes8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology
• Large clearance (9 mm) and creepage distances (13 mm).
Typical Applications:
Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D
IGBT Modules SKD 75 GAL 123 D Input bridge B6U with brake chopper