Semikron SKD75GAL123D IGBT Module

Features:

• Round main terminals (2 mm∅)

• Easy drilling of PCB

• Input diodes glass passivated

• 1400 V PIV, good for 500 VAC

• High I2 t rating (inrush current)

• IGBT is latch-up free, homogeneous NPT silicon-structure

• High short circuit capability, self limiting to 6 * Icnom

• Fast & soft CAL diodes8)

• Isolated copper baseplate using DCB Direct Copper Bonding Technology

• Large clearance (9 mm) and creepage distances (13 mm).

Typical Applications:

Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D

IGBT Modules SKD 75 GAL 123 D Input bridge B6U with brake chopper