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2DI75M-120 Fuji Electric 1200V 75A Power Transistor Module

2DI75M-120 Power Transistor Module In-stock / Fuji Electric: 1200V 75A. Darlington configuration with diode. 90-day warranty. Contact our sales team.

· Categories: IGBT
· Manufacturer: Fuji Electric
· Price: US$ 35 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 433
90-Day Warranty
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Whatsapp: 0086 189 2465 1869

Content last revised on July 5, 2026

2DI75M-120 Fuji Electric Power Transistor Module

Delivering exceptional thermal endurance and high DC current gain for legacy industrial switching and motor control applications. Top Specs: 1200V | 75A | 500W PC. Key Benefits: High arm short-circuit capability; integrated free-wheeling diode. This module solves backward-compatibility issues in older motor control systems, eliminating the need to redesign obsolete drive boards. For legacy 400V AC motor drives demanding high arm short-circuit protection, this 1200V Darlington module provides the most reliable drop-in replacement.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

Parameter Symbol Rating Engineering Context
Collector-Emitter Voltage VCES 1200V Defines the maximum blocking voltage during off-state switching.
Continuous Collector Current IC 75A The maximum continuous current handling capability at TC=25°C.
Collector Power Dissipation PC 500W Total allowable power dissipation per device to maintain thermal margins.
Isolation Voltage VIsol 2500V AC Guarantees electrical isolation between terminals and the copper baseplate.
Peak Collector Current ICP 150A Maximum allowable pulse current for 1ms transients.
Operating Junction Temperature Tj +150°C Upper temperature limit for safe semiconductor junction operation.
Storage Temperature Range Tstg -40 to +125°C Temperature range allowed for non-operating storage.

Download the 2DI75M-120 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in Legacy Power Conversion

Legacy industrial hardware relies on mature power modules that sustain harsh electrical environments. The Fuji Electric 2DI75M-120 is designed for heavy-duty motor control systems, Uninterruptible Power Supplies (UPS), and industrial welding machines.

For instance, in legacy industrial conveyor systems, motor start-up events generate high inrush currents that can degrade standard semiconductors. The 2DI75M-120 mitigates this by utilizing its high peak collector current capability of 150A (1ms pulse) and 500W power dissipation limit, allowing the system to absorb transient surges without triggering thermal shutdown. This ensures heavy machinery remains operational under cyclic mechanical loads.

Robotics and NC machine tool spindle drives benefit from the integrated free-wheeling diode, which handles inductive kickback during deceleration, protecting the main switching transistors. When configuring systems that require modern field-effect switching rather than bipolar Darlington configurations, engineers may examine the related 2MBI75N-120 or the advanced 2MBI75U4A-120-50, both of which offer similar 1200V / 75A ratings in a modern IGBT configuration. For details on transitioning from legacy components, review our power semiconductor selection framework. As part of Fuji Electric's legacy power module lineup, this module provides direct compatibility for machinery built around early-generation GTR architecture.

Technical & Design Deep Dive

A Closer Look at the Darlington Configuration and Short-Circuit Ruggedness

Bipolar Darlington power modules operate differently from modern voltage-controlled IGBTs. GTR modules like the 2DI75M-120 employ a two-transistor cascaded Darlington configuration to multiply current gain, allowing low-power driver cards to control currents up to 75A.

The Darlington pair behaves like a mechanical force amplifier (such as power steering in a vehicle), where a tiny input base current controls a massive collector current, enabling low-power microcontrollers to drive heavy industrial motors with minimal gating power. However, this cascaded architecture causes a higher collector-emitter saturation voltage (VCE(sat)) than single-stage transistors, leading to higher conduction losses and making thermal design critical.

To ensure reliability under thermal load, the module features a copper baseplate and an insulated structure rated for 2500V AC. This isolation voltage functions like a safety valve, preventing high-voltage transients from breaching control circuitry and protecting human operators.

The fast-recovery free-wheeling diode (FWD) handles inductive loads. When switching off, the magnetic field in motor windings collapses, generating a high-voltage back-EMF spike (V = L × di/dt). The FWD provides a recirculating path, clamping the voltage and preventing collector-emitter breakdown. Engineers troubleshooting legacy modules can consult a detailed guide on power module structures to understand layout and mounting.

Q: What is the primary benefit of the module's high arm short-circuit capability?
A: It prevents catastrophic system failure by tolerating brief phase-to-phase short circuits.

Q: What is the function of the insulated baseplate?
A: It isolates electrical components from the heatsink, allowing simplified mounting.

From a lifecycle perspective, selecting quality replacement modules extends the lifespan of legacy equipment. Implementing drop-in components avoids the cost and downtime of redesigning gate drives for newer, incompatible architectures.

Frequently Asked Questions

Addressing Common Integration and Performance Concerns

Can the 2DI75M-120 be directly replaced by a modern IGBT module in legacy VFDs?
No. IGBTs are voltage-controlled devices, whereas Darlington GTR modules are current-controlled. Direct replacement without modifying the gate driver board will result in failure. The drive circuitry must be updated to output voltage pulses instead of base currents.

How does the hFE gain of the 2DI75M-120 Darlington pair affect its drive requirements?
The high current gain (typically hFE > 100) minimizes the base drive current required to saturate the transistor. This allows standard drive circuitry to control collector currents up to 75A efficiently, although switching speeds are slower than modern field-effect devices.

What is the engineering significance of the integrated free-wheeling diode in this module?
The fast-recovery diode provides a low-impedance path for inductive energy during turn-off. This prevents high-voltage transient spikes (V = L × di/dt) from exceeding the 1200V collector-emitter rating, protecting the Darlington junction from avalanche breakdown.

What precautions should be taken regarding the 3.5 N·m mounting screw torque?
Proper torque ensures optimal contact with the heatsink. Under-torqueing leads to poor heat transfer and thermal runaway, while over-torqueing risks cracking the ceramic isolation substrate, compromising the 2500V isolation rating.

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