Content last revised on April 24, 2024
Features
●V-IGBT= 6. Generation Trench V-IGBT (Fuji)
●CAL4 = Soft switching 4. Generation CAL -diode
●lsolated copper baseplate using DBC technology (Direct Copper Bonding)
●Increased power cycling capability
●With integrated gate resistor
●Low switching losses at high di/dt
Typical Applications*
●AC inverter drives
●UPS
●Electronic welders
●Switched reluctance motor
Remarks
●Case temperature limited to
Tc= 125°C max, recomm.
Top= -40.. +150°C, product
rel. results valid for T= 150°
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:110W
Isolation Voltage VIsol (AC 1 minute) :4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.5~5N·m
Weight 330 g