Product Tag:
mg150
MG150Q1JS40 TOSHIBA HIGH POWER SWITCHING APPLICATIONS.CHOPPER APPLICATIONS.1200V 150A
MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT 1200V 150A
MG150N2YS40 150A/1000V/IGBT/2U
Toshiba MG150Q2YS50: A 1200V/150A half-bridge IGBT module delivering efficient power. Low VCE(sat) and fast switching ensure high reliability for demanding motor drive and inverter applications.
Toshiba MG150J1BS11: A robust 600V/150A IGBT engineered for high reliability. Its low VCE(sat) ensures maximum efficiency in demanding motor drives and power supplies.
Toshiba MG150J7KS50: A 600V/150A high-speed IGBT module engineered for fast switching. It minimizes losses to deliver superior power density and efficiency in demanding power systems.
MG150Q2YK1 Power Bipolar Transistor, 150A I(C), 1-Element
Toshiba MG150Q2YS51: A robust 1200V/150A dual IGBT module delivering proven, high-reliability switching for demanding industrial power conversion.
Toshiba MG150Q2YS1: A robust 1200V/150A dual IGBT module engineered for high-reliability industrial power conversion and simplified half-bridge circuit design.
MG15Q6ES1: Robust 1200V/15A N-channel IGBT module for high-voltage power conversion. Offers dependable switching for motor drives and inverters, ensuring system safety and reliability.