#Fuji, #2DI50A_140, #IGBT_Module, #IGBT, 2DI50A-140 FUJI Power Bipolar Transistor, 50A 1400V 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
Power transistors and free wheels are built into one package.
Terminal layout in which drive wiring and power wiring do not come across.
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1400V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:400W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C