Infineon BSM300GA12DN2S IGBT Module

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: Details

Part No: BSM300GA12DN2S

Configuration:Single

Collector- Emitter Voltage VCEO Max:1200 V

Collector-Emitter Saturation Voltage:2.5 V

Continuous Collector Current at 25 C:300 A

Gate-Emitter Leakage Current:200 nA

Pd - Power Dissipation:1400 W

Package / Case:62 mm

Minimum Operating Temperature: - 40°C

Maximum Operating Temperature: + 150°C

Packaging:Tray

Height:36.5 mm

Length:106.4 mm

Technology:Si

Width:61.4 mm

Brand:Infineon Technologies

Mounting Style:Chassis Mount

Maximum Gate Emitter Voltage:20 V

Product Type: IGBT Modules

IGBT Power Module 1200V/300A/1400W