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CM100TX-24S Mitsubishi 1200V 100A S-Series IGBT Module

  • CM100TX-24S

CM100TX-24S IGBT Module In-stock / Mitsubishi: 1200V 100A single switch. S-Series for low loss. 90-day warranty, for motor drives. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: Mitsubishi
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1332
90-Day Warranty
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Content last revised on July 9, 2026

CM100TX-24S by Mitsubishi: An Engineering Review of a High-Efficiency 1200V IGBT Module

Optimizing Mid-Power Systems with Low-Loss Switching Performance

The CM100TX-24S is a high-performance S-Series IGBT module from Mitsubishi Electric, engineered to deliver a superior balance of efficiency and reliability in demanding power conversion systems. With its core specifications of 1200V | 100A | VCE(sat) 2.2V typ, this module leverages Mitsubishi's advanced Trench Gate technology to minimize critical power losses. Key benefits include enhanced system efficiency and simplified thermal management. This module directly addresses the challenge of creating more compact and efficient power electronics by reducing the heat that must be dissipated, thereby enabling smaller heatsink designs. For mid-range industrial applications requiring robust performance on 400V to 480V AC lines, the CM100TX-24S provides a precisely optimized solution.

What is the primary benefit of Trench Gate technology? It significantly reduces VCE(sat) for lower conduction losses. What is the module's voltage rating? It is rated for a Vces of 1200V.

Key Parameter Overview

Decoding the Specs for Enhanced Switching Efficiency

The performance of the CM100TX-24S is defined by its electrical and thermal characteristics, which are optimized for high-efficiency switching. The low typical Collector-Emitter Saturation Voltage of 2.2V at a full 100A load is a direct result of its S-Series Trench Gate IGBT chip, translating to minimized conduction losses. The module's thermal resistance from junction to case (Rth(j-c)) of 0.20°C/W for the IGBT ensures effective heat transfer, which is critical for maintaining reliability under continuous operation. These parameters are foundational for engineers designing efficient and thermally stable power stages. For a comprehensive guide on interpreting these values, consider reading about how to decode IGBT datasheets.

Electrical Characteristics (Tj=25°C unless otherwise noted)
Collector-Emitter Voltage (Vces) 1200V
Collector Current (Ic) 100A
Collector-Emitter Saturation Voltage (VCE(sat)) at Ic=100A, Tj=125°C 2.2V (typ), 2.7V (max)
Gate-Emitter Voltage (VGES) ±20V
Total Power Dissipation (Pc) at Tc=25°C 625W
Thermal and Mechanical Specifications
Thermal Resistance, Junction to Case (Rth(j-c)) - IGBT 0.20°C/W
Isolation Voltage (Visol), AC 1 min 2500Vrms
Operating Junction Temperature (Tj) -40 to +150°C

Download the CM100TX-24S datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in Industrial Motor Control

The CM100TX-24S is ideally suited for mid-power industrial applications where efficiency and reliability are paramount. A prime engineering scenario is in the design of a Variable Frequency Drive (VFD) for conveyor systems or industrial pumps. In such systems, the ability to precisely control motor speed directly impacts energy consumption. The module's low VCE(sat) minimizes heat generation during operation, reducing the need for bulky and expensive heatsinks and enabling a more compact overall VFD design. Its 1200V rating provides a robust safety margin against voltage transients common in industrial environments, while the 100A current handling capability is well-matched for motors in the 15-30 kW range. This combination of features allows designers to meet stringent energy efficiency standards and improve the long-term reliability of the equipment. For systems requiring higher current handling for larger motors, the related CM150TX-24S offers an increased current rating of 150A within a similar package footprint.

Frequently Asked Questions

Clarifying Engineering Implications of the CM100TX-24S

How does the S-Series Trench Gate technology in the CM100TX-24S contribute to lower conduction losses?
The Trench Gate structure creates a vertical gate within the silicon, which allows for a higher channel density compared to older planar technologies. This design significantly lowers the on-state resistance, directly reducing the Collector-Emitter Saturation Voltage (VCE(sat)). A lower VCE(sat) means less power is dissipated as heat when the IGBT is conducting current, leading to major improvements in overall system efficiency.

What is the significance of the single-switch ("TX") configuration in system design?
The "TX" designation indicates a single IGBT switch with an integrated, anti-parallel free-wheeling diode (FWD) in one package. This configuration offers design flexibility for engineers building various power converter topologies. It can be used as a building block for choppers, single-phase bridges, or as individual switches in more complex custom converter designs, simplifying inventory and procurement compared to using discrete IGBTs and diodes.

Technical Deep Dive

Balancing Conduction and Switching Losses for Optimal Performance

A critical aspect of power electronic design is managing the trade-off between conduction losses and switching losses. The CM100TX-24S, featuring Mitsubishi CSTBT™ related technology, is engineered to provide an optimal balance for mid-frequency applications (typically 5-20 kHz). Its low VCE(sat) of 2.2V (typ) at 100A and 125°C directly reduces conduction losses, which are dominant in applications with high duty cycles. However, this must be balanced with switching losses (Eon and Eoff), which increase with frequency. The datasheet provides detailed curves showing these energy losses across different current levels, allowing engineers to accurately model and predict the module's thermal performance.

Effective thermal management is key to unlocking this performance. The module's thermal resistance (Rth(j-c)) of 0.20°C/W is a crucial parameter. Think of thermal resistance like the narrowness of a pipe carrying heat away from the chip. A lower Rth value is like a wider pipe, allowing heat to flow more easily to the heatsink, keeping the junction temperature lower. This superior heat extraction capability is fundamental to ensuring long-term operational reliability. For deeper insights into this topic, explore resources on mastering IGBT thermal management.

To further evaluate the suitability of the CM100TX-24S for your specific design-in requirements or to explore alternative power modules, please contact our technical sales team for a detailed consultation.

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