CM300DU-12F Mitsubishi Electric 600V 300A Dual IGBT Module

CM300DU-12F Intelligent Power Module (IPM) In-stock / Mitsubishi: 600V 300A high-power switching. 90-day warranty, inverters. Global fast shipping. Get quote.

· Categories: Intelligent Power Module (IPM)
· Manufacturer: Mitsubishi
· Price: US$ 45
· Date Code: Please Verify on Quote
. Available Qty: 415
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Content last revised on January 15, 2026


Mitsubishi CM300DU-12F | A Benchmark in Reliability for 600V Power Conversion

The Mitsubishi CM300DU-12F is a dual IGBT module engineered for high-reliability power conversion systems. As a cornerstone of Mitsubishi's F-Series, this 600V, 300A module has established itself as a go-to component for engineers designing robust, high-performance applications. It represents a mature and field-proven solution that balances efficiency, thermal stability, and ruggedness, making it an ideal choice for demanding industrial environments.

Core Strengths of the CM300DU-12F

  • Proven Reliability: Built upon Mitsubishi's established F-Series platform, offering predictable performance and long operational life in the field.
  • Optimized for Low-Frequency Operation: Engineered with a focus on minimizing conduction losses, making it exceptionally efficient in applications like motor drives and general-purpose inverters operating below 15 kHz.
  • Excellent Thermal Management: Features an insulated baseplate and low thermal impedance, facilitating efficient heat dissipation and enhancing system durability.
  • Industry-Standard Package: Housed in a conventional package, ensuring straightforward mechanical integration and potential for drop-in replacement in existing designs.

Technical Deep Dive: The Engineering Behind the Performance

The enduring success of the CM300DU-12F isn't accidental; it's rooted in fundamental design choices that prioritize electrical and thermal robustness. Two key aspects stand out:

  • 4th Generation CSTBT™ Technology: At its heart, this module utilizes Mitsubishi's CSTBT™ (Carrier Stored Trench-gate Bipolar Transistor) technology. Unlike earlier planar gate structures, the trench gate design creates a more uniform electric field and increases carrier concentration. For the design engineer, this directly translates into a lower collector-emitter saturation voltage (VCE(sat)). The result is significantly reduced conduction losses, a critical factor for efficiency in high-current, lower-frequency applications.
  • Low Thermal Resistance Design: Effective heat evacuation is paramount for power module longevity. The CM300DU-12F employs an Aluminum Nitride (AlN) ceramic isolation layer, which provides excellent electrical isolation while maintaining superior thermal conductivity compared to older Alumina (Al2O3) substrates. This low Thermal Resistance (Rth(j-c)) ensures that heat generated at the silicon chip is efficiently transferred to the heatsink, preventing thermal runaway and extending power cycling capability. For a deeper understanding of IGBT construction, see our guide on deconstructing the IGBT hybrid structure.
  • Key Parameter Overview

    The following table outlines the critical electrical and thermal characteristics. For complete specifications and application notes, you can Download the Datasheet.

    Parameter Value
    Collector-Emitter Voltage (Vces) 600V
    Collector Current (Ic) @ Tc=80°C 300A
    Collector-Emitter Saturation Voltage (Vce(sat)), typ. @ Ic=300A 2.2V
    Power Dissipation per IGBT (Pc) @ Tc=25°C 1040W
    Short-Circuit Withstand Time (tsc) 10µs
    Junction-to-Case Thermal Resistance (Rth(j-c)), per IGBT 0.12 °C/W
    Case Operating Temperature (Tc) -40°C to +150°C

    Application Focus: Where the CM300DU-12F Excels

    The specific characteristics of the Mitsubishi CM300DU-12F make it a prime candidate for a range of power conversion tasks:

    • Variable Frequency Drives (VFDs): Its low VCE(sat) and robust construction are perfect for the demanding, continuous operation of industrial motor control, delivering high efficiency and reliability.
    • Welding Power Supplies: The module's ability to handle high pulse currents and its strong Short Circuit Safe Operating Area (SCSOA) are critical for ensuring longevity in inverter-based welding systems.
    • Uninterruptible Power Supplies (UPS): In UPS systems, reliability is non-negotiable. The proven F-Series platform and excellent thermal performance of the CM300DU-12F provide the dependability needed to protect critical loads.

    Engineer's FAQ for the CM300DU-12F

    What are the recommended gate drive parameters for this module?

    For optimal performance, a gate drive voltage of +15V for turn-on and -10V for turn-off is recommended. A negative gate voltage is crucial to provide a strong buffer against dv/dt-induced turn-on, preventing shoot-through, especially in half-bridge configurations. Adhering to these parameters is a key part of robust IGBT gate drive design to prevent catastrophic failures.

    Can the CM300DU-12F be paralleled for higher current applications?

    Yes, this IGBT module can be paralleled. However, success hinges on careful design. Key considerations include ensuring symmetrical PCB layout for gate drive signals to minimize switching time discrepancies and using IGBTs with closely matched VCE(sat) values to promote current sharing. Proper thermal management, with all modules mounted on a single, well-designed heatsink, is also essential to maintain thermal balance.

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