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MITSUBISHI CM350DU-5F

  • CM350DU-5F

CM350DU-5F Insulated Gate Bipolar Transistor, 350A I(C), 250V V(BR)CES, N-Channel,; CM350DU-5F

· Categories: IGBT
· Manufacturer: MITSUBISHI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 220
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Content last revised on June 7, 2023

Manufacturer Part Number: CM350DU-5FPbfree Code: NoPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X7ECCN Code: EAR99Manufacturer: Mitsubishi ElectricRisk Rank: 5.19Additional Feature: SUPER FAST RECOVERYCase Connection: ISOLATEDCollector Current-Max (IC): 350 ACollector-Emitter Voltage-Max: 250 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 960 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 350A I(C), 250V V(BR)CES, N-Channel,

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