#Mitsubshi, #CM600HG_90H, #IGBT_Module, #IGBT, Mitsubshi hvigbt Modules High power switching use insulated 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Tran
MITSUBISHI HVIGBT MODULES HIGH POWER SWITCHING USEINSULATED TYPE ●IC..................................................................600 A ●VCES ......................................................4500 V ●High Insulated Type ●1-element in a Pack ●AISiC Baseplate Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:4500V Gate-Emitter voltage VGES:±20V Collector current Ic:600A Collector current Icp:1200A Collector power dissipation Pc:7500W Collector-Emitter voltage VCES:10200V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting M5 screw torque 3.0~6.0 N·m Weight Typical value 1kg