NIEC PAH15012

  • PAH15012

PAH15012 Silicon Controlled Rectifier, 235A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-6; PAH15012

· Categories: IGBT
· Manufacturer: NIEC
· Price: US$
· Date Code: Please Verify on Quote
. Available Qty: 300
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Content last revised on March 4, 2025

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
VCES Repetitive Peak Off-State Voltage 1200V
VGES Gate-Emitter voltage:±20V
±lc Average Rectified Output Current Half sine waveTC= 73°C 150A
RMS On-State Current ITRMS 235 A
Surge On-State Current 50Hz half-sine wave, 1 pulse ITSM 3200 A
Peak Gate Power PGM 5 W
Tj Junction Temperature -20~+100°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque M6 2.5~3.5 N·m
Applications: Likely used in power conversion, motor control, or high-voltage switching systems.
Graphical Data: Refer to the original document for curves like I Ovs. T j, surge current ratings, and thermal impedance.
Weight 480g

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