Mitsubishi PM300CLA120 IGBT Module

Feature
. Adopting new 5th generation IGBT chip, which performance is improved by 1um fine rule process. For example, typical Vce(sat)-2.25V Tj=125°C
. I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
. Monolithic gate drive & protection logic
. Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage(Fo availale from all arm devices)
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:300A
Collector current Icp:600A
Collector power dissipation Pc:1562W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 2.5~3.5 N·m