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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

L6X8E8

L6X8E8

L6X8E8 4 Quadrant Logic Level TRIAC, 600V V(DRM), 0.8A I(T)RMS, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; L6X8E8
1SI10A-100

1SI10A-100

1SI10A-100 Power Bipolar Transistor, 10A I(C), 1-Element; 1SI10A-100
VI-224-EV

VI-224-EV

VI-224-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-224-EV
V24C28C100AL3

V24C28C100AL3

V24C28C100AL3 DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V24C28C100AL3
PD70F160

PD70F160

PD70F160 Silicon Controlled Rectifier, 70000mA I(T), 1600V V(RRM); PD70F160
C380PC

C380PC

C380PC Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element, T62, 3 PIN; C380PC
SMMBT2222ALT1G

SMMBT2222ALT1G

SMMBT2222ALT1G NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL; SMMBT2222ALT1G
PM20CMA060

PM20CMA060

PM20CMA060 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES,; PM20CMA060
W0428RF30

W0428RF30

W0428RF30 Rectifier Diode, 1 Phase, 1 Element, 428A, 3000V V(RRM), Silicon,; W0428RF30
MCD26-12IO1B

MCD26-12IO1B

MCD26-12IO1B Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, TO-240AA, 5 PIN; MCD26-12IO1B