GA35XCP12-247 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel; GA35XCP12-247
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.