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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

6MBI300U-120

6MBI300U-120

6MBI300U-120 IGBT Module In-stock / Fuji Electric: 1200V 300A. Low Vce(sat) for VFDs. 90-day warranty. Global fast shipping. Get quote.
QRF1230T30

QRF1230T30

QRF1230T30 Rectifier Diode, 1 Phase, 2 Element, 193A, 1200V V(RRM), Silicon, MODULE-3; QRF1230T30
BS36UG25V200T

BS36UG25V200T

BS36UG25V200T Electric Fuse, 200A, 250VAC, 100000A (IR), Inline/holder,; BS36UG25V200T
JD224505

JD224505

JD224505 Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,; JD224505
VI-J13-CX

VI-J13-CX

VI-J13-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J13-CX
VI-J5T-IZ

VI-J5T-IZ

VI-J5T-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J5T-IZ
IRFK2D250

IRFK2D250

IRFK2D250 Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET; IRFK2D250
1DI150F-055

1DI150F-055

1DI150F-055 Transistor; 1DI150F-055
F1827CCD1000

F1827CCD1000

F1827CCD1000 Rectifier Diode, 1 Phase, 2 Element, 25A, 1000V V(RRM), Silicon, MODULE-3; F1827CCD1000
APTGT50X120RTP3G

APTGT50X120RTP3G

APTGT50X120RTP3G Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; APTGT50X120RTP3G