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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGT50X120RTP3G

APTGT50X120RTP3G

APTGT50X120RTP3G Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; APTGT50X120RTP3G
T707123054BY

T707123054BY

T707123054BY Silicon Controlled Rectifier, 475A I(T)RMS, 475000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T70, 3 PIN; T707123054BY
DMC561070R

DMC561070R

DMC561070R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, SC-113CB, 5 PIN; DMC561070R
PD54003L-E

PD54003L-E

PD54003L-E RF Power LDMOS transistor; PD54003L-E
GBJ806

GBJ806

GBJ806 Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN; GBJ806
DDTA124TCA-7

DDTA124TCA-7

DDTA124TCA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; DDTA124TCA-7
FZ1200R12KL4C

FZ1200R12KL4C

FZ1200R12KL4C Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
MDD310-08N1

MDD310-08N1

MDD310-08N1 Rectifier Diode, 1 Phase, 2 Element, 305A, 800V V(RRM), Silicon,; MDD310-08N1
FMP76-010T

FMP76-010T

FMP76-010T Power Field-Effect Transistor, 62A I(D), 100V, 0.011ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4-PAK-5; FMP76-010T
VI-23M-CY

VI-23M-CY

VI-23M-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-23M-CY