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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SMUN5315DW1T1G

SMUN5315DW1T1G

SMUN5315DW1T1G Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; SMUN5315DW1T1G
MBR30060CTR

MBR30060CTR

MBR30060CTR Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 60V V(RRM), Silicon,; MBR30060CTR
VDI50-06P1

VDI50-06P1

VDI50-06P1 Insulated Gate Bipolar Transistor, 42.5A I(C), 600V V(BR)CES, N-Channel, ECOPAC-10; VDI50-06P1
CD631415B

CD631415B

CD631415B Silicon Controlled Rectifier, 235A I(T)RMS, 150000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, POW-R-BLOK-7; CD631415B
VVZB120-16IO2

VVZB120-16IO2

VVZB120-16IO2 Silicon Controlled Rectifier, 77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 3 Element, MODULE-11; VVZB120-16IO2
RM20TPM-24

RM20TPM-24

RM20TPM-24 Bridge Rectifier Diode, 3 Phase, 40A, 1200V V(RRM), Silicon; RM20TPM-24
HSMP-381B-TR2G

HSMP-381B-TR2G

HSMP-381B-TR2G Pin Diode, 100V V(BR), Silicon, ROHS COMPLIANT, SC-70, 3 PIN; HSMP-381B-TR2G
PTMB75A6

PTMB75A6

PTMB75A6 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19; PTMB75A6
TM55CZ-2H

TM55CZ-2H

TM55CZ-2H Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element,; TM55CZ-2H
CD431840B

CD431840B

CD431840B Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, POW-R-BLOK-7; CD431840B